Desorption ionization on silicon: Difference between revisions

Revision as of 22:04, 25 December 2005

Desorption ionization on silicon
DRAFT DEFINITION
The formation of ions through the irradiation of a sample deposited on a porous silicon surface. See also laser desorption/ionization and surface-assisted laser desorption/ionization.
Considered between 2004 and 2006 but not included in the 2006 PAC submission
This is an unofficial draft definition presented for information and comment. Recommended terms \| Full list of terms

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 {{DefName|
-This occurs when a sample deposited on a porous silicon is irradiated with a laser beam of which the wavelength is absorbed by the porous surface. See also [[laser desorption/ionization]] and [[surface-assisted laser desorption/ionization]].
+The formation of ions through the irradiation of a sample deposited on a porous silicon surface. See also [[laser desorption/ionization]] and [[surface-assisted laser desorption/ionization]].
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